Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Yong Tae | - |
| dc.date.accessioned | 2024-01-12T11:40:23Z | - |
| dc.date.available | 2024-01-12T11:40:23Z | - |
| dc.date.created | 2022-01-14 | - |
| dc.date.issued | 1995-07-01 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/85986 | - |
| dc.title | The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | Proc. of the 2nd Korea-China Symp. on Ion Beam Modification of Materials and Thin Film Materials, pp.0 | - |
| dc.citation.title | Proc. of the 2nd Korea-China Symp. on Ion Beam Modification of Materials and Thin Film Materials | - |
| dc.citation.startPage | 0 | - |
| dc.citation.endPage | 0 | - |
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