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dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-12T11:40:23Z-
dc.date.available2024-01-12T11:40:23Z-
dc.date.created2022-01-14-
dc.date.issued1995-07-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/85986-
dc.titleThe properties of nitrogen implanted tungsten diffusion barrier for Cu metallization-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationProc. of the 2nd Korea-China Symp. on Ion Beam Modification of Materials and Thin Film Materials, pp.0-
dc.citation.titleProc. of the 2nd Korea-China Symp. on Ion Beam Modification of Materials and Thin Film Materials-
dc.citation.startPage0-
dc.citation.endPage0-
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