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dc.contributor.authorHyeong rak Lim-
dc.contributor.authorKim Seong Kwang-
dc.contributor.authorJae-Hoon Han-
dc.contributor.authorShim Jae Phil-
dc.contributor.authorSubin Lee-
dc.contributor.authorKim Hyung-jun-
dc.contributor.authorByeong-Kwon Ju-
dc.contributor.authorSanghyeon Kim-
dc.date.accessioned2024-01-12T12:41:28Z-
dc.date.available2024-01-12T12:41:28Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/87181-
dc.languageEnglish-
dc.publisher2.5~7, 강원 하이원리조트-
dc.titleImprovement on interfacial quality of Ge MOS Capacitor using RIE O2 plasma treatment-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국반도체학술대회-
dc.citation.title한국반도체학술대회-
dc.citation.conferencePlaceKO-
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