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dc.contributor.author최원준-
dc.contributor.author강광남-
dc.contributor.author김선호-
dc.contributor.author이희택-
dc.contributor.author이석-
dc.contributor.author한일기-
dc.contributor.author김회종-
dc.contributor.author우덕하-
dc.date.accessioned2024-01-12T13:36:33Z-
dc.date.available2024-01-12T13:36:33Z-
dc.date.issued2002-02-19-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/88129-
dc.title양자우물　무질서화　기술에서　유전체－반도체　덮개층　조합에　의한　InGaAs/InGaAsP양자우물　밴드갭의　조작방법-
dc.typePatent-
dc.date.registration2002-02-19-
dc.date.application1999-10-12-
dc.identifier.patentRegistrationNumber326773-
dc.identifier.patentApplicationNumber99-44158-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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