DSpace at KIST: Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink

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DC Field	Value	Language
dc.contributor.author	Kim, Yong Tae	-
dc.contributor.author	Jung-Hee Lee	-
dc.contributor.author	Jhon, Young Min	-
dc.date.accessioned	2024-01-12T15:07:27Z	-
dc.date.available	2024-01-12T15:07:27Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/90124	-
dc.language	English	-
dc.subject	GaN	-
dc.subject	Power FET	-
dc.subject	Diamond Heat Sink	-
dc.title	Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	International Conference on Solid State Devices and Materials, v.PS-6-1, pp.168 - 169	-
dc.citation.title	International Conference on Solid State Devices and Materials	-
dc.citation.volume	PS-6-1	-
dc.citation.startPage	168	-
dc.citation.endPage	169	-
dc.citation.conferencePlace	JA	-

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