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Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink

Authors

Kim, Yong Tae; Jung-Hee Lee; Jhon, Young Min

Citation

International Conference on Solid State Devices and Materials, v.PS-6-1, pp.168 - 169

Keywords

GaN; Power FET; Diamond Heat Sink

URI

https://pubs.kist.re.kr/handle/201004/90124

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KIST Conference Paper > Others

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