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dc.contributor.author김승환-
dc.contributor.author김형준-
dc.date.accessioned2024-01-12T16:31:47Z-
dc.date.available2024-01-12T16:31:47Z-
dc.date.issued2023-05-10-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/91409-
dc.title3차원 적층 구조의 상부층으로의 스레딩 변전위의 전파가 억제되는 트렌치 구조를 갖는 반도체 소자-
dc.typePatent-
dc.date.registration2023-05-10-
dc.date.application2021-01-28-
dc.identifier.patentRegistrationNumber10-2532540-0000-
dc.identifier.patentApplicationNumber10-2021-0012069-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2021
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