DSpace at KISTKIST Patent2015

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dc.contributor.author김상현-
dc.contributor.author최원준-
dc.contributor.author박민수-
dc.contributor.author금대명-
dc.date.accessioned2024-01-12T17:03:21Z-
dc.date.available2024-01-12T17:03:21Z-
dc.date.issued2018-07-03-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/92106-
dc.title고속 에피택셜 리프트오프를 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자-
dc.typePatent-
dc.date.registration2018-07-03-
dc.date.application2015-09-15-
dc.identifier.patentRegistrationNumber10014216-
dc.identifier.patentApplicationNumber14/854221-
dc.publisher.countryUS-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2015
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