Strain-relaxed SiGe layer on Si formed by PIII&D technology

Authors
HAN, SEUNG HEEMoon Sun WooKim SungminKim Kyeong-Hun
Citation
The 12th International Workshop on PBIID
Keywords
plasma immersion ion implantation; plasma; ion implantation; strain-relaxed SiGe; SiGe; Non-gaseous plasma immersion ion implantation; HiPIMS
URI
https://pubs.kist.re.kr/handle/201004/93370
Appears in Collections:
KIST Conference Paper > Others
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