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dc.contributor.authorKim, Yong Tae-
dc.contributor.authorEun Sik Jung-
dc.contributor.authorEy Goo Kang-
dc.date.accessioned2024-01-12T20:06:45Z-
dc.date.available2024-01-12T20:06:45Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/95707-
dc.languageEnglish-
dc.subjectPower device-
dc.subjectBreakdown Voltage-
dc.subjectDeep trench-
dc.subjectSuper junction-
dc.subjectMOSFET-
dc.titleOptimization and characterization of 600V super junction power MOSFET using a deep trench structure-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAsia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), pp.16 - 21-
dc.citation.titleAsia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)-
dc.citation.startPage16-
dc.citation.endPage21-
dc.citation.conferencePlaceKO-
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