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Optimization and characterization of 600V super junction power MOSFET using a deep trench structure

Authors

Kim, Yong Tae; Eun Sik Jung; Ey Goo Kang

Citation

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), pp.16 - 21

Keywords

Power device; Breakdown Voltage; Deep trench; Super junction; MOSFET

URI

https://pubs.kist.re.kr/handle/201004/95707

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KIST Conference Paper > Others

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