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dc.contributor.authorKim, Yong Tae-
dc.contributor.authorEy Goo Kang-
dc.contributor.authorHo Jung Chang-
dc.date.accessioned2024-01-12T21:06:25Z-
dc.date.available2024-01-12T21:06:25Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/96800-
dc.languageEnglish-
dc.subjectOptimal design-
dc.subjectpower MOS-
dc.subjectGaN-
dc.subject600V-
dc.subjectAl2O3 gate oxide-
dc.titleA study on the optimal design of 600V GaN power MOSFET using Al2O3 gate oxide-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAsia Pacific Interdisciplinary Research Conf.2011, pp.18pp-51-
dc.citation.titleAsia Pacific Interdisciplinary Research Conf.2011-
dc.citation.startPage18pp-51-
dc.citation.endPage18pp-51-
dc.citation.conferencePlaceJA-
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