GROWTH OF HIGH-QUALITY THIN InSb FILMS (<0.6 μm) GROWN ON GaAs SUBSTRATE WITH InxAl1-xSb CONTINUOUSLY GRADED BUFFER

Authors
Shin Sang HoonSONG, JIN-DONGT.G, Kim
Citation
2011 International Forum on Functional materials, pp.570
Keywords
MBE; InAlSb; grading; Epitaxy
URI
https://pubs.kist.re.kr/handle/201004/97444
Appears in Collections:
KIST Conference Paper > Others
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