DSpace at KIST: Effect of reactive gas of fluorides on Si etching by using ICP-RIE

Full metadata record

DC Field	Value	Language
dc.contributor.author	Sang-Heon Kim	-
dc.contributor.author	Jung, Sung Mok	-
dc.contributor.author	Kim, Young-Hwan	-
dc.date.accessioned	2024-01-12T22:35:05Z	-
dc.date.available	2024-01-12T22:35:05Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/98396	-
dc.language	English	-
dc.subject	실리콘 나노선	-
dc.subject	ICP-RIE	-
dc.subject	수직 식각	-
dc.title	Effect of reactive gas of fluorides on Si etching by using ICP-RIE	-
dc.title.alternative	ICP-RIE를 이용한 실리콘 식각에 미치는 플루오르계 반응 가스의 영향	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	한국진공학회 제34회 정기학술대회, pp.246	-
dc.citation.title	한국진공학회 제34회 정기학술대회	-
dc.citation.startPage	246	-
dc.citation.endPage	246	-
dc.citation.conferencePlace	KO	-

Show Simple Item Record

KIST Library Institutional Repository