Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jang Ho Won | - |
| dc.contributor.author | 이종람 | - |
| dc.date.accessioned | 2024-01-12T22:37:02Z | - |
| dc.date.available | 2024-01-12T22:37:02Z | - |
| dc.date.created | 2021-09-29 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/98534 | - |
| dc.language | English | - |
| dc.title | On the origin of annealing-induced degradation in Al-based ohmic contacts to N-Face n-GaN | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | International Conference on Electronic Materials and Nanotechnology for Green Environment 2010 | - |
| dc.citation.title | International Conference on Electronic Materials and Nanotechnology for Green Environment 2010 | - |
| dc.citation.conferencePlace | KO | - |
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