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dc.contributor.authorYang Min Kyu-
dc.contributor.authorLee, Jeon Kook-
dc.contributor.author고태국-
dc.date.accessioned2024-01-12T23:07:08Z-
dc.date.available2024-01-12T23:07:08Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/99121-
dc.languageEnglish-
dc.subjectresistive switching-
dc.subjectTiN top electrode-
dc.subjectMnO2 active layer-
dc.subjectnonvolatile memory-
dc.titleBipolar resistive switching behavior in Ti/MnO2/Pt structure of nonvolatile Memory Devices-
dc.title.alternativeTi/MnO2/Pt 구조 비휘발성 저항변화 소자의 바이폴라 스위칭 특성-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation5th Forum on New Materials, Montecatini Terme, Italy, June 13-18, 2010-
dc.citation.title5th Forum on New Materials, Montecatini Terme, Italy, June 13-18, 2010-
dc.citation.conferencePlaceIT-
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