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Bipolar resistive switching behavior in Ti/MnO2/Pt structure of nonvolatile Memory Devices

Other Titles

Ti/MnO2/Pt 구조 비휘발성 저항변화 소자의 바이폴라 스위칭 특성

Authors

Yang Min Kyu; Lee, Jeon Kook; 고태국

Citation

5th Forum on New Materials, Montecatini Terme, Italy, June 13-18, 2010

Keywords

resistive switching; TiN top electrode; MnO2 active layer; nonvolatile memory

URI

https://pubs.kist.re.kr/handle/201004/99121

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KIST Conference Paper > Others

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