Showing results 38 to 67 of 85
Issue Date | Title | Author(s) |
---|---|---|
- | Optical control of p-channel double heterojunction MODFET | KIM HWE JONG; Lee Jung Il; 김동명; Han Il Ki; Jacques Zimmermann |
- | Optical control of p-channel MODFET | KIM HWE JONG; Han Il Ki; Lee Jung Il; 김동명 |
- | Optical controlled AlGaAs/GaAs pseudomorphic MODFET | KIM HWE JONG; 송상호; 김동명; Woo Deok Ha; Lee Seok; Choi Won Jun; Han Il Ki; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 조규만 |
- | Optical effects in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET | KIM HWE JONG; D. M. Kim; Lee Jung Il; J. Zimmermann |
- | Optical responses of Al0.3Ga0.7As/GaAs/In0.13Ga0.87As double heterojunction pseudomorphic MODFET | KIM HWE JONG; 김동명; 정해양; Woo Deok Ha; Choi Won Jun; Lee Seok; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; 조규만 |
- | Optical studies on a series of AlAs/GaAs short period superlattices | Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Seok; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; M.S. Oh; Y.D. Kim; S.G. Choi; E.H. Koh; S.J. Rhee; J.C. Woo |
- | PECVD 방법으로 SiN 박막을 성장함으로써 얻어지는 양자우물 무질서화 및 양자우물의 Al 확산계수의 계산 . | Choi Won Jun; Lee Seok; Jingming Zhang; Lee Jung Il; KIM YOUN; KANG KWANG NHAM; KIM SANG KUK; 조규만 |
- | Photonic control of DC and microwave characteristics in AlGaAs/GaAs/InGaAs double heterostructure pseudomorphic HEMT's. | KIM HWE JONG; Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; S. J. Kim; D. M. Kim; H. Chung; S. I. Kim; S. H. Kim; K. Cho |
- | Photonic control of p-channel double heterojunction MODFET | KIM HWE JONG; Lee Jung Il; 김동명; Han Il Ki; Jacques Zimmermann |
- | Photonics DC and microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET. | KANG KWANG NHAM; KIM HWE JONG; S. H. Song; D. M. Kim; Han Il Ki; Lee Jung Il; S. H. Kim; S. S. Choi; K. Cho |
- | Quantum well disordering by using plasma enhanced chemical vapor deposited SiN//x film as a capping layer. | KANG KWANG NHAM; W. J. Choi; S. Lee; Y. Kim; Lee Jung Il; S. K. Kim |
- | Recent research trend of semi-solid state processing technology | Lee Jung Il; 이호인 |
- | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering | Choi Won Jun; 한상민; S.I. Shah; CHOI SUKGEUN; Woo Deok Ha; Lee Seok; KIM HWE JONG; Han Il Ki; Lee Jung Il; KANG KWANG NHAM; 조재원 |
- | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing Si-rich SiN capping layer for dielectric cap quantum well disordering | Choi Won Jun; KIM HWE JONG; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
- | Reduction of saturated transconductance in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee |
- | RIE 로 처리된 GaAs 표면의 전기적 특성연구 . | Kim Seong Il; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; 조준환; 임한조; Yoo Jong Lee; LEE MYOUNG BOG |
- | Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots | SONG JIN-DONG; Y. M. Park; J. G. Lim; Shin Jae Cheol; Park Young Ju; Choi Won Jun; Han Il Ki; Cho Woon Jo; Lee Jung Il |
- | Schottky barrier enhancement of InGaAs with SiNx grown by PECVD. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 박홍이; Han Il Ki |
- | Semiconductor laser diode die bonding using AuSn solder | 최상현; 배형철; Heo Duchang; Han Il Ki; Cho Woon Jo; Choi Won Jun; Park Young Ju; Lee Jung Il; 이천 |
- | Si-rich SiN를 이용한 GaAs/AlGaAs 다층 양자 우물에서 Al-Ga 상호 확산의 감소 | Choi Won Jun; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Woo Deok Ha; Han Il Ki; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
- | Spectral hole burning on Sm²+-doped M'0.5M0.5FCl0.5Br0.5(M',M : Ba, Sr, Mg) mixed crystals at room temperature | YOU BYUNG YONG; BAE HYUN SOOK; PYUN CHONG-HONG; KIM CHANG HONG; 김주철; Lee Jung Il; 장기완; KIM IL GON; 서효진 |
- | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing technique | J.C. Shin; Choi Won Jun; Han Il Ki; Park Young Ju; Lee Jung Il; E.K. Kim; H.J. Kim; J.W. Choi |
- | Spectral response modification of quantum well infrared photodetector by quantum well intermixing. | Shin Jae Cheol; Choi Won Jun; Han Il Ki; Park Young Ju; Lee Jung Il; KIM EUN KYU; H.J. Kim; 최정우 |
- | Spectroscopic ellipsometry measurements on the silicon nitride films formed by PECVD in InP. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; 김상열 |
- | Study on the characteristics of InGaAsP/InGaAs MQW-LD with differently p-doped and asymmetric structures | Han Il Ki; Heo Duchang; Choi Won Jun; Lee Jung Il; 이주인 |
- | Surface passivated InP MSM schottky diodes. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Y. J.Lee; G. H. Park; H. L. Park |
- | Temperature characteristics of InGaAs/InGaAsP MQW laser diode grown by chemical beam epitaxy | 엄창섭; KPARK KYUNG HYUN; Byun Young Tae; Han Il Ki; Woo Deok Ha; Kim Sun Ho; Lee Jung Il; PARK JEONG HO |
- | Temperature dependence of low frequency noise mechanisms in schottky barrier structure | Lee Jung Il; Han Il Ki; J. Brini; A. Chovet; C. A. Dimitriadis |
- | The characteristics of In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors illuminated by laser | KIM JONG WOOK; 강현일; 오재응; KIM HWE JONG; Choi Won Jun; Lee Seok; Han Il Ki; Woo Deok Ha; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM |
- | The exchange of P and As in chemical beam epitaxy growth | CHOI SUKGEUN; Woo Deok Ha; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 김영동 |