| 1988-07 | (100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 . | 김용; 김무성; 김현수, et al |
| 1987-01 | A study of Au-Ge/Ag/Au ohmic contact on n-type (100) GaAs epi-wafer. | 강광남; 권철순; 최인훈, et al |
| 1988-10 | Anomalous conduction band density of state in AlGaAs alloys. | 김용; 김무성; 민석기 |
| 1994-01 | Atomic force microcopy를 이용한 Al0.5Ga0.5As/GaAs 다층 에피층구조의 단면관찰에 관한 연구 | 김용; 김희진; 김재성, et al |
| 1992-07 | Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD. | 김용; 김태환; 김무성, et al |
| 1992-01 | Carbon doping characteristics in GaAs grown by LPMOCVD. | 김성일; 민석기; 김용, et al |
| 1993-01 | Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD. | 손창식; 김성일; 김용, et al |
| 1994-08 | Carbon doping characteristics of GaAs and AlGaAs grown by MOCVD using CCl4 | 김용; 김성일; 김무성, et al |
| 1996-01 | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | 손창식; 민병돈; 박만장, et al |
| 1993-01 | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | 손창식; 김성일; 김용, et al |
| 1994-01 | CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성 | 김용; 손창식; 김성일, et al |
| 1990-01 | Characteristics of C-doped GaAs and critical layer thickness. | 김성일; 엄경숙; 김용, et al |
| 1995-01 | Characteristics of etching for Al//0//.//3Ga//0//.//7As/GaAs multilayer. | 김성일; 민석기; 민병돈, et al |
| 1993-01 | Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness. | 김용; 김성일; 엄경숙, et al |
| 1996-01 | Characteristics of laser dry etching for AlGaAs/GaAs multilayer. | 김성일; 민석기; 박세기, et al |
| 1991-01 | Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD. | 김성일; 민석기; 김용, et al |
| 1991-01 | Characterization of a MOCVD grown GaAs/AlGaAs superlattice using spectroscopic ellipsometry. | 김용; 김무성; 김상열, et al |
| 1996-08 | Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates | 김성일; 김무성; 김용, et al |
| 1995-01 | Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4. | 김성일; 김무성; 민석기, et al |
| 1995-02 | Cross-sectional observation of NaClO stain-etched AlGaAs/GaAs multilayer by AFM. | 김용; 김희진; 김재성, et al |
| 1987-01 | DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs. | 강광남; 이유종; 엄경숙, et al |
| 1990-03 | Deep traps in GaAs layers grown on (100)Si substrates by Mo(VI). | 김용; 조훈영; 김은규, et al |
| 1992-01 | Diffusion limiting mechanism in Si-delta-doped GaAs grown by MOCVD. | 김용; 김태환; 김무성, et al |
| 1991-02 | Dislocation accelerated diffusion of Si in delta-doped GaAs grown on silicon substrates by MOCVD. | 김용; 김무성; 이주천, et al |
| 1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | 김태근; 박정호; 김용, et al |
| 1996-01 | Effects of a rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs. | 손창식; 김성일; 김태근, et al |
| 1996-01 | Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs. | 김성일; 손창식; 김태근, et al |
| 1992-12 | Electric subbands in Si-delta-doped GaAs grown by MOCVD. | 김용; 김태환; 김무성, et al |
| 1993-08 | Electrical characteristics of carbon-doped GaAs. | 김용; 김성일; 김무성, et al |
| 1996-01 | Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | 손창식; 황성민; 김성일, et al |
