Browsing by Author 김무성

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Showing results 1 to 30 of 114

Issue DateTitleAuthor(s)
1988-07(100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 .김용; 김무성; 김현수, et al
1987-01A study of Au-Ge/Ag/Au ohmic contact on n-type (100) GaAs epi-wafer.강광남; 권철순; 최인훈, et al
1988-10Anomalous conduction band density of state in AlGaAs alloys.김용; 김무성; 민석기
1994-01Atomic force microcopy를 이용한 Al0.5Ga0.5As/GaAs 다층 에피층구조의 단면관찰에 관한 연구김용; 김희진; 김재성, et al
1992-07Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD.김용; 김태환; 김무성, et al
1992-01Carbon doping characteristics in GaAs grown by LPMOCVD.김성일; 민석기; 김용, et al
1993-01Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.손창식; 김성일; 김용, et al
1994-08Carbon doping characteristics of GaAs and AlGaAs grown by MOCVD using CCl4김용; 김성일; 김무성, et al
1996-01Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.손창식; 민병돈; 박만장, et al
1993-01Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.손창식; 김성일; 김용, et al
1994-01CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성김용; 손창식; 김성일, et al
1990-01Characteristics of C-doped GaAs and critical layer thickness.김성일; 엄경숙; 김용, et al
1995-01Characteristics of etching for Al//0//.//3Ga//0//.//7As/GaAs multilayer.김성일; 민석기; 민병돈, et al
1993-01Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness.김용; 김성일; 엄경숙, et al
1996-01Characteristics of laser dry etching for AlGaAs/GaAs multilayer.김성일; 민석기; 박세기, et al
1991-01Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD.김성일; 민석기; 김용, et al
1991-01Characterization of a MOCVD grown GaAs/AlGaAs superlattice using spectroscopic ellipsometry.김용; 김무성; 김상열, et al
1996-08Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates김성일; 김무성; 김용, et al
1995-01Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4.김성일; 김무성; 민석기, et al
1995-02Cross-sectional observation of NaClO stain-etched AlGaAs/GaAs multilayer by AFM.김용; 김희진; 김재성, et al
1987-01DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs.강광남; 이유종; 엄경숙, et al
1990-03Deep traps in GaAs layers grown on (100)Si substrates by Mo(VI).김용; 조훈영; 김은규, et al
1992-01Diffusion limiting mechanism in Si-delta-doped GaAs grown by MOCVD.김용; 김태환; 김무성, et al
1991-02Dislocation accelerated diffusion of Si in delta-doped GaAs grown on silicon substrates by MOCVD.김용; 김무성; 이주천, et al
1996-08Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array김태근; 박정호; 김용, et al
1996-01Effects of a rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs.손창식; 김성일; 김태근, et al
1996-01Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs.김성일; 손창식; 김태근, et al
1992-12Electric subbands in Si-delta-doped GaAs grown by MOCVD.김용; 김태환; 김무성, et al
1993-08Electrical characteristics of carbon-doped GaAs.김용; 김성일; 김무성, et al
1996-01Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.손창식; 황성민; 김성일, et al

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