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Showing results 1 to 30 of 187

Issue DateTitleAuthor(s)
1988-07(100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 .김용; 김무성; 김현수, et al
1998-10A self-assembled silicon quantum dot transistor operating at room temperature최범호; 황성민; I. G. Kim, et al
1999-08A silicon self assembled quantum dot transistor operating at room temperature최범호; 황성우; I.G. Kim, et al
1998-12A silicon self assembled quantum dot transistor operating at room temperature최범호; 황성우; I.G. Kim, et al
1998-09AlGaAs/GaAs heteroface solar cells grown by metalorganic chemical vapor deposition박영균; 김성일; 김용, et al
1999-12Aligned In0.5Ga0.5As quantum dots on laser patterned GaAs substrate박세기; 현찬경; 민병돈, et al
1997-05Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory박영균; 김성일; 김용, et al
1997-11Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory박영균; 김성일; 김용, et al
1998-02Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wellsShu Yuan; 김용; H. H. Tan, et al
1988-10Anomalous conduction band density of state in AlGaAs alloys.김용; 김무성; 민석기
1994-01Atomic force microcopy를 이용한 Al0.5Ga0.5As/GaAs 다층 에피층구조의 단면관찰에 관한 연구김용; 김희진; 김재성, et al
1992-07Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD.김용; 김태환; 김무성, et al
1992-01Carbon doping characteristics in GaAs grown by LPMOCVD.김성일; 민석기; 김용, et al
1993-01Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.손창식; 김성일; 김용, et al
1994-08Carbon doping characteristics of GaAs and AlGaAs grown by MOCVD using CCl4김용; 김성일; 김무성, et al
1993-01Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.손창식; 김성일; 김용, et al
1997-10Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition손창식; 김성일; 김용, et al
1995-12Carrier lifetimes in dielectric disordered GaAs/AlGaAs multiple quantum well with SiN capping layers.김용; 최원준; 이석, et al
1994-01CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성김용; 손창식; 김성일, et al
1990-01Characteristics of C-doped GaAs and critical layer thickness.김성일; 엄경숙; 김용, et al
1993-01Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness.김용; 김성일; 엄경숙, et al
1991-01Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD.김성일; 민석기; 김용, et al
1991-01Characterization of a MOCVD grown GaAs/AlGaAs superlattice using spectroscopic ellipsometry.김용; 김무성; 김상열, et al
1996-08Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates김성일; 김무성; 김용, et al
1995-01Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4.김성일; 김무성; 민석기, et al
1995-02Cross-sectional observation of NaClO stain-etched AlGaAs/GaAs multilayer by AFM.김용; 김희진; 김재성, et al
1997-02Crystallographic orientation dependence of carbon incorporation into GaAs epilayers손창식; 김성일; 김용, et al
1997-04Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄손창식; 김성일; 김용, et al
1990-03Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition.김은규; 조훈영; 김용, et al
1990-02Deep levels in GaAs grown on Si during rapid thermal annealing.김용; 조훈영; 김은규, et al

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