| - | A method of improving dielectric constant and adhesion strength of methyl silsesquioxane by using a NH3 plasma treatment | Kim Yong Tae |
| - | A method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment | 심현상; Kim Yong Tae; 김동준; 전형탁; 추상현; 차국현 |
| - | A new ferroelectric gate structure for low power operation of non volatile memory devices | Kim Yong Tae; 심선일; Kim Seong Il; 최훈상; 최인훈; Makoto Ishida |
| - | A proposal of Pt-SrBi//2Ta//2O//9/CeO//2/Si structure for non destructive read out memory devices | 신동석; Kim Yong Tae; 한용희 |
| - | Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 심선일; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann |
| - | AlGaAs/GaAs heteroface solar cells grown by metalorganic chemical vapor deposition | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; KIM EUN KYU; Kim Yong Tae; Min Suk-Ki |
| 1993-01 | Atomic force microscopic observation in the surface morphologies and roughness of plasma deposited tungsten and tungsten nitride thin films. | Kim Yong Tae; C. S. Kwon; I. H. Choi; C. W. Lee; Min Suk-Ki |
| - | Atomic force microscopy study and absorption properties of epitaxial AlxGa1-xN | Jewon Kim; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann |
| - | Auger electron microscopy study of AlGaN grown by molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; PARK YOUNG KYUN; Kim Yong Tae; 최인훈 |
| - | Ceramic properties coating for YBa//2Cu//3O//7//-//x superconductors. | Kim Yong Tae; T. S. Hahn; S. S. Yom.; J. H. Park; S. S. Choi; S. J. Park |
| - | Characteristic of tungsten nitride atomic layer deposition | 심현상; Kim Yong Tae; 전형탁 |
| - | Characteristics of amorphous Ta-Si-N thin film for Cu metallization | 김동준; 정순필; Kim Yong Tae; Min Suk-Ki; 박종완 |
| - | Characteristics of amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization. | Kim Yong Tae; 이창우; 박상규; Min Suk-Ki |
| - | Characteristics of lead titanate and lead zirconate titanate thin films grown by MOCVD. | Kim Yong Tae; S. S. Yom |
| - | Characteristics of molybdenum nitride thin film by N2+ ion implantation | 김동준; 김익수; Kim Yong Tae; 박종완 |
| - | Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect | 심현상; Kim Yong Tae; 전형탁 |
| - | Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect. | Kim Yong Tae; 심현상 |
| - | Characteristics of quantum wire structures grown by low pressure MOCVD | Kim Seong Il; Kim Young Hwan; Kim Yong Tae |
| 1994-01 | Characteristics of RF magnetron sputtered (Ba, Sr)TiO//3 thin films on RuO//2 bottom electrode. | Kim Yong Tae; J. G. Lee; H. N. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki |
| - | Characteristics of RuOx thin films as a sacrificial diffusion barrier for Cu metallization | Kim Yong Tae; H. S. Yoon; C. S. Kwon; H. N. Lee; J. Jang; Min Suk-Ki |
| - | Characteristics of SrBi//2Ta//2O//9/CeO//2/Pt/Si structure for non-volatile memory device | Ho Nyung Lee; Kim Yong Tae; 이창우; 신동석; 조성호 |
| - | Characteristics of SrBi//2Ta//2O//9/thin oxide/Si structure for non-destructive read out | Kim Yong Tae; Ho Nyung Lee; 임명호; 조성호 |
| - | Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source | Kim Yong Tae; PARK YOUNG KYUN; 신동석; 최훈상; 최인훈 |
| - | Characteristics of the crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si structure | 최훈상; 김은홍; Kim Yong Tae; 최인훈 |
| - | Characteristics of tungsten boron nitride thin film by plasma enhanced chemical vapor deposition | 김동준; Kim Yong Tae; 박종완 |
| - | Characteristics of W-N diffusion barrier by atomic layer chemical vapor deposition | 심현상; Kim Yong Tae; 전형탁 |
| - | Comparison in electrical properties SrBi//2Ta//2O//9/CeO//2/Si and SrBi//2Ta//2O//9/Si structures | 신동석; Kim Yong Tae; Ho Nyung Lee; 이창우; 최인훈 |
| - | Comparison of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization. | Kim Yong Tae; 권철순; 김동준; 이창우; 최인훈 |
| - | Comparison of ferroelectric hysteresis between Pt and RuO2 top electrodes for SrBi2Ta2O9/Pt and SrBi2Ta2O9/Si structures | Sung-Kyun Lee; Ho Nyung Lee; Kim Yong Tae; 이철의 |
| 1994-01 | Comparison of high temperature thermal stability of Ru and RuO//2 schottky contact to GaAs. | Kim Yong Tae; S. K. Kwak; C. W. Lee; J. G. Lee; C. S. Kwon; K. S. Jung; Min Suk-Ki |
