2001-04 | Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer | Choi, HS; Kim, YT; Kim, SI; Choi, IH |
2001-12 | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | Choi, HS; Park, KS; Hur, JS; Choi, IH; Kim, YT; Kim, SI |
2003-11-01 | Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator | Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY; Choi, IH |
2000-11 | Sol-gel processing for epitaxial growth of ZrO2 thin films on Si(100) wafers | Bae, SY; Choi, HS; Choi, SY; Oh, YJ |
2000-02 | SrBi2Ta2O9 thin films grown by MOCVD using a novel double metal alkoxide precursor | Shin, DS; Choi, HS; Kim, YT; Choi, IH |
2003-07 | Synthesis of heteroarylpiperazines and heteroarylbipiperidines with a restricted side chain and their affinities for 5-HT1A receptor | Yoo, KH; Choi, HS; Kim, DC; Shin, KJ; Kim, DJ; Song, YS; Jin, C |
2001-06-01 | The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure | Choi, HS; Kim, EH; Choi, IH; Kim, YT; Choi, JH; Lee, JY |