Sol-gel processing for epitaxial growth of ZrO2 thin films on Si(100) wafers

Abstract

High quality epitaxial thin films of t-ZrO2, were fabricated on Si(100) wafers via sol-gel processing. The thin films exhibited high epitaxial quality (FWHM similar to 0.3 degrees) and excellent surface morphology (rms roughness similar to 14 Angstrom); thus, they are expected to be very useful as epitaxial buffer layers. (C) 2000 Elsevier Science Ltd and Techna S.r.l. All rights reserved.