Showing results 3 to 7 of 7
Issue Date | Title | Author(s) |
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2008-11 | Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures | Shin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G. |
2015-04 | Graphene-GaN Schottky diodes | Kim, Seongjun; Seo, Tae Hoon; Kim, Myung Jong; Song, Keun Man; Suh, Eun-Kyung; Kim, Hyunsoo |
2017-11-15 | High work function MoO2 and ReO2 contacts for p-type Si and GaN by a room-temperature non-vacuum process | Lee, Won-Jae; Parmar, Narendra S.; Choi, Ji-Won |
2001-04 | Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures | Kim, TW; Lee, DU; Jung, M; Lee, JH; Kim, HJ; Choo, DC; Kim, JY; Yoon, YS |
2009-07 | Preparation and Analysis of Schottky Diodes with Au and Sol-gel-processed ZnO Thin Films | Kim, Kyoungwon; Song, Yong-Won; Leem, Jaehyeon; Lee, Sang Yeol; Kim, Sangsig |