Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures

Abstract

A new approach has been introduced for the fabrication of Ru/p-InP(100) heterostructures with the goal of producing stable Ru contacts and sharp Ru/p-InP heterointerfaces. Atomic force microscopy and X-ray diffraction measurements showed that the Ru film layers grown on InP substrates were polycrystalline thin films with very smooth surfaces. Auger electron spectroscopy and Rutherford backscattering measurements showed that the composition of the as-grown film was Ru and that the Ru/InP interface quality was relatively good. Transmission electron microscopy and selected-area electron-diffraction measurements showed that the grown Ru film was a polycrystalline layer with small grain domains. These results can help improve understanding for the application of Ru/InP heterostructures in high-speed metal-semiconductor field-effect transistors. (C) 2001 Elsevier Science Ltd. All rights reserved.