| 2004-01-15 | Fabrication and properties of As-doped ZnO films grown on GaAs(001) substrates by radio frequency (rf) magnetron sputtering | Lee, W; Hwang, DK; Jeong, MC; Lee, M; Oh, MS; Choi, WK; Myoung, JM |
| 2000-04 | Gas-source molecular-beam epitaxial growth and optical characterization of AlxGa1-xP (0 <= x <= 78) alloy films | Choi, SG; Woo, DH; Kim, SH; Oh, MS; Kim, YD |
| 2002-10-24 | Investigations on Ta2O5/ZnO insulator-semiconductor interfaces | Nandi, SK; Choi, WK; Noh, YS; Oh, MS; Maikap, S; Hwang, NM; Kim, DY; Chatterjee, S; Samanta, SK; Maiti, CK |
| 1999-04 | Optical studies on a series of AlAs/GaAs short period superlattices | Oh, MS; Choi, SG; Kim, YD; Woo, DH; Koh, EH; Kim, SH; Kang, KN; Rhee, SJ; Woo, JC |
| 1999-07 | Photoluminescence emitted from Si vs. Ge nanocrystals embedded in a SiO2 matrix | Jeong, JY; Im, SI; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 1999-07 | Photoluminescence induced by Si-implantation into SiO2 layers at elevated temperatures | Kim, HB; Kim, TG; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JB |
| 2000-05 | Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy | Woo, DH; Oh, MS; Koh, EH; Yahng, JS; Kim, SH; Kim, YD |
| 1998-12 | The origin of photoluminescence in Ge-implanted SiO2 layers | Kim, HB; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JH |
