Browsing byAuthorGhibaudo, Gerard

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Showing results 7 to 12 of 12

Issue DateTitleAuthor(s)
2021-06Impact of Channel Length on the Operation of Junctionless Transistors With Substrate BiasingJeon, Dae-Young; Mouis, Mireille; Barraud, Sylvain; Ghibaudo, Gerard
2017-03Impact of series resistance on the operation of junctionless transistorsJeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard
2008-04Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structureLee, Jungil; Yu, Byung-Yong; Lee, Chul Ho; Yi, Gyu-Chul; Son, Seung Hun; Kim, Gyu-Tae; Ghibaudo, Gerard
2011-03-28Low-frequency noise in junctionless multigate transistorsJang, Doyoung; Lee, Jae Woo; Lee, Chi-Woo; Colinge, Jean-Pierre; Montes, Laurent; Lee, Jung Il; Kim, Gyu Tae; Ghibaudo, Gerard
2008-07Physical understanding of the Hooge parameter in ZnO nanowire devicesLee, Jungil; Han, Ilki; Yu, Byung-Yong; Yi, Gyu-Chul; Ghibaudo, Gerard
2018-03Series resistance in different operation regime of junctionless transistorsJeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard

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