Series resistance in different operation regime of junctionless transistors

Authors
Jeon, Dae-YoungPark, So JeongMouis, MireilleBarraud, SylvainKim, Gyu-TaeGhibaudo, Gerard
Issue Date
2018-03
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
SOLID-STATE ELECTRONICS, v.141, pp.92 - 95
Abstract
Operation mode dependent series resistance (R-sd) behavior of junctionless transistors (JLTs) has been discussed in detail. R-sd was increased for decreasing gate bias in bulk conduction regime, while a constant value of R-sd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted R-sd. This work provides key information for a better understanding of JLT operation affected by R-sd effects with different state of conduction channel.
Keywords
NANOWIRE TRANSISTORS; PARAMETER EXTRACTION; NANOWIRE TRANSISTORS; PARAMETER EXTRACTION; Junctionless transistors (JLTs); Series resistance (R-sd); Bulk channel; Accumulation channel; Numerical simulation and temperature dependence
ISSN
0038-1101
URI
https://pubs.kist.re.kr/handle/201004/121656
DOI
10.1016/j.sse.2017.12.013
Appears in Collections:
KIST Article > 2018
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