Impact of series resistance on the operation of junctionless transistors
- Authors
- Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard
- Issue Date
- 2017-03
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v.129, pp.103 - 107
- Abstract
- Transconductance (g(m)) and its derivative (dg(m)/dV(g)) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (R-sd) causes significant degradation of intrinsic g(m) and dg(m)/dV(g) behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded R-sd effects. (C) 2016 Elsevier Ltd. All rights reserved.
- Keywords
- NANOWIRE TRANSISTORS; NM; NANOWIRE TRANSISTORS; NM; Junctionless transistors (JLTs); Bulk neutral conduction; Series resistance (R-sd); Analytical modeling; De-embedded Rsd effects
- ISSN
- 0038-1101
- URI
- https://pubs.kist.re.kr/handle/201004/123002
- DOI
- 10.1016/j.sse.2016.12.004
- Appears in Collections:
- KIST Article > 2017
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.