2011-06-01 | Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz | Lee, Deuk-Hee; Park, Dong-Hoon; Kim, Sangsig; Lee, Sang Yeol |
2008-02-15 | Heat generation properties of Ga doped ZnO thin films prepared by rf-magnetron sputtering for transparent heaters | Kim, Jong Hoon; Du Ahn, Byung; Kim, Choong Hee; Jeon, Kyung All; Kang, Hong Seong; Lee, Sang Yeol |
2010-04-12 | High stability of amorphous hafnium-indium-zinc-oxide thin film transistor | Chong, Eugene; Jo, Kyoung Chul; Lee, Sang Yeol |
2010-03 | High-Performance a-IGZO TFT With ZrO2 Gate Dielectric Fabricated at Room Temperature | Lee, Jae Sang; Chang, Seongpil; Koo, Sang-Mo; Lee, Sang Yeol |
2011-08-01 | Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
2012-01 | Influence of a highly doped buried layer for HfInZnO thin-film transistors | Chong, Eugene; Lee, Sang Yeol |
2007-12-01 | Influence of thermal annealing ambient on Ga-doped ZnO thin films | Du Ahn, Byung; Oh, Sang Hoon; Lee, Choong Hee; Kim, Gun Hee; Kim, Hyun Jae; Lee, Sang Yeol |
2009-02 | Investigation on doping behavior of copper in ZnO thin film | Kim, Gun Hee; Kim, Dong Lim; Ahn, Byung Du; Lee, Sang Yeol; Kim, Hyun Jae |
2011-04-29 | Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer | Chong, Eugene; Jeon, Yong Woo; Chun, Yoon Soo; Kim, Dae Hwan; Lee, Sang Yeol |
2009-12-15 | Morphology transition of Ag-doped ZnO nanostructures in hot-walled pulsed laser deposition | Song, Yong-Won; Kim, Kyoungwon; Lee, Sang Yeol |
2009-12-15 | Morphology-controlled one-dimensional ZnO nanostructures with customized Ga-doping | Song, Yong-Won; Lee, Sang Yeol |
2010-10 | Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs | Park, Young-Su; Lee, Sang Yeol; Lee, Jang-Sik |
2011-08-08 | Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress | Kim, Bosul; Chong, Eugene; Kim, Do Hyung; Jeon, Yong Woo; Kim, Dae Hwan; Lee, Sang Yeol |
2007-03 | Photoluminescence of ZnO nanowires grown on sapphire (1 1 (2)over-bar-0) substrates | Jeon, Kyung Ah; Son, Hyo Jeong; Kim, Chang Eun; Kim, Jong Hoon; Lee, Sang Yeol |
2009-07-08 | Physically processed Ag-doped ZnO nanowires for all-ZnO p-n diodes | Song, Yong-Won; Kim, Kyoungwon; Ahn, Jae Pyoung; Jang, Gun-Eik; Lee, Sang Yeol |
2009-07 | Preparation and Analysis of Schottky Diodes with Au and Sol-gel-processed ZnO Thin Films | Kim, Kyoungwon; Song, Yong-Won; Leem, Jaehyeon; Lee, Sang Yeol; Kim, Sangsig |
2009-12-15 | Properties of N-doped ZnO grown by DBD-PLD | Leem, Jae-Hyeon; Lee, Deuk-Hee; Lee, Sang Yeol |
2012 | Reduction of channel resistance in amorphous oxide thin-film transistors with buried layer | Chong, Eugene; Kim, Bosul; Lee, Sang Yeol |
2008-03-31 | Relationship between ultraviolet emission and electron concentration of ZnO thin films | Kang, Hong Seong; Kim, Gun Hee; Lim, Sung Hoon; Chang, Hyun Woo; Kim, Jong Hoon; Lee, Sang Yeol |
2010-03-31 | Role of high-k gate insulators for oxide thin film transistors | Lee, Sang Yeol; Chang, Seongpil; Lee, Jae-Sang |
2012-12 | Role of Si as carrier suppressor in amorphous Zn-Sn-O | Kang, IlJoon; Park, Chul Hong; Chong, Eugene; Lee, Sang Yeol |
2010-12-20 | Role of silicon in silicon-indium-zinc-oxide thin-film transistor | Chong, Eugene; Kim, Seung Han; Lee, Sang Yeol |
2010-06-14 | Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration | Chang, Seongpil; Dong, Ki-Young; Park, Jung-Ho; Oh, Tae-Yeon; Kim, Jong-Woo; Lee, Sang Yeol; Ju, Byeong-Kwon |
2008-10-01 | Synthesis and analysis of resistance-controlled Ga-doped ZnO nanowires | Lee, Sang Yeol; Song, Yong-Won; Jeon, Kyung Ah |
2007-07-31 | Synthesis of ZnO nanowires by pulsed laser deposition in furnace | Son, Hyo Jeong; Jeon, Kyung Ah; Kim, Chang Eun; Kim, Jong Hoon; Yoo, Kyung Hwa; Lee, Sang Yeol |
2010-07 | Systematic investigation on the effect of contact resistance on the performance of a-IGZO thin-film transistors with various geometries of electrodes | Lee, Jae Sang; Chang, Seongpil; Bouzid, Houcine; Koo, Sang-Mo; Lee, Sang Yeol |
2011-03-14 | Temperature stress on pristine ZnO nanowire field effect transistor | Kim, Kyoungwon; Debnath, Pulak Chandra; Kim, Sangsig; Lee, Sang Yeol |
2010-09-01 | The effect of annealing on amorphous indium gallium zinc oxide thin film transistors | Bae, Hyeon-seok; Kwon, Jae-Hong; Chang, Seongpil; Chung, Myung-Ho; Oh, Tae-Yeon; Park, Jung-Ho; Lee, Sang Yeol; Pak, James Jungho; Ju, Byeong-Kwon |
2011-07 | The relationship between processing parameters and the performance of novel amorphous silicon-indium-zinc oxide thin film transistors | Chong, Eugene; Kim, Seung Han; Cho, Eun Ah; Jang, Gun-Eik; Lee, Sang Yeol |
2008-02-15 | Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films | Du Ahn, Byung; Kim, Jong Hoon; Kang, Hong Seong; Lee, Choong Hee; Oh, Sang Hoon; Kim, Kyoung Won; Jang, Gun-Eik; Lee, Sang Yeol |