Relationship between ultraviolet emission and electron concentration of ZnO thin films

Authors
Kang, Hong SeongKim, Gun HeeLim, Sung HoonChang, Hyun WooKim, Jong HoonLee, Sang Yeol
Issue Date
2008-03-31
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.516, no.10, pp.3147 - 3151
Abstract
ZnO thin films were deposited on (0001) Al2O3 substrates depending on oxygen partial pressure by pulsed laser deposition. Optical properties of ZnO were investigated by photoluminescence (PL). The relationship between PL and electron concentration has been investigated. Origin of the dominant ultraviolet (UV) emission in ZnO thin film measured at room temperature was identified as a free electron-neutral-acceptor transition (eA(0)) through temperature dependence of PL measurement. The UV emission intensity at room temperature is related to variation of electron concentration because a free-electron-neutral-acceptor transition (eA(0)) as origin of UV emission at room temperature is related to impurity concentration of ZnO. (c) 2007 Elsevier B.V. All rights reserved.
Keywords
P-TYPE ZNO; PHOTOLUMINESCENCE; FABRICATION; P-TYPE ZNO; PHOTOLUMINESCENCE; FABRICATION; ZnO; ultraviolet emission; electron concentration
ISSN
0040-6090
URI
https://pubs.kist.re.kr/handle/201004/133630
DOI
10.1016/j.tsf.2007.08.084
Appears in Collections:
KIST Article > 2008
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