| 2002-06 | Implantation of N ions on sapphire substrate for improvement of GaN epilayer | Cho, YS; Jhin, J; Park, YJ; Cho, S; Koh, EK; Kim, EK; Kim, G; Byun, D; Min, SK |
| 2001 | Implantation of N-ion on sapphire substrate for GaN epilayer | Park, YJ; Cho, YS; Koh, EK; Kim, EK; Kim, GG; Byun, DJ; Min, SK |
| 2002-06 | Improved crystalline quality of GaN by substrate ion beam pretreatment | Cho, YS; Jhin, J; Koh, EK; Park, YJ; Kim, EK; Kim, G; Min, SK; Byun, D |
| 1996-08-12 | Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography method | Kim, TG; Kim, EK; Min, SK; Park, JH |
| 2003-06 | Influence of intentionally strained sapphire substrate on GaN epilayers | Kim, J; Park, YJ; Byun, D; Jhin, J; Kang, M; Koh, EK; Moon, Y; Min, SK |
| 1997-06 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved GaAs substrates | Kim, EK; Lee, MS; Kim, SI; Park, YJ; Min, SK; Lee, JY |
| 1997-03 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates | Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JY |
| 1996-10 | Large-area GaAs/AlGaAs quantum wire array grown by metalorganic chemical vapor deposition on a GaAs substrate with submicron gratings | Kim, TG; Hwang, SM; Kim, EK; Min, SK; Park, JH; Park, JH |
| 1997-05 | Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases | Kim, MS; Lee, C; Park, SK; Choi, WC; Kim, EK; Kim, SI; Ahn, BS; Min, SK |
| 1997-01 | Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD | Kim, SI; Kim, MS; Kim, Y; Hwang, SM; Min, BD; Son, CS; Kim, EK; Min, SK |
| 1998-04 | Maskless selective epitaxial growth on patterned GaAs substrates by metalorganic chemical vapor deposition | Son, CS; Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1997-06 | Molecular-dynamics study of the vacancy-hydrogen and vacancy-deuterium complexes in silicon | Park, YK; Kim, EK; Min, SK |
| 2005-08 | Nanocrystalline haematite thin films by chemical solution spray | Desai, JD; Pathan, HM; Min, SK; Jung, KD; Joo, OS |
| 1999-01 | Nuclear magnetic relaxation studies of Ga-69, Ga-71, and As-75 nuclei in GaAs single crystals doped with paramagnetic impurities | Yeom, TH; Kim, IG; Choh, SH; Hong, KS; Park, YJ; Min, SK |
| 1998-01 | One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 | Kim, EK; Kim, TG; Son, CS; Kim, SI; Park, YK; Kim, Y; Min, SK; Choi, IH |
| 1997-03-01 | Oxygen atomic flux O-* enhancement by gas-pulsed electron cyclotron resonance plasma | Park, YJ; OKeeffe, P; Ozasa, K; Mutoh, H; Aoyagi, Y; Min, SK |
| 1998-08 | Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations | Kim, TG; Park, KH; Hwang, SM; Kim, Y; Kim, EK; Min, SK; Leem, SJ; Jeon, JI; Park, JH; Chang, WSC |
| 1998-04 | Photoluminescence in carbon-doped GaAs grown by atmospheric-pressure metalorganic chemical vapor deposition | Cho, SH; Kim, EK; Min, SK |
| 2006-01-15 | Preparation and characterization of iron oxide thin films by spray pyrolysis using methanolic and ethanolic solutions | Desai, JD; Pathan, HM; Min, SK; Jung, KD; Joo, OS |
| 2006-05-10 | Preparation and characterization of titanium dioxide thin films by SILAR method | Pathan, HM; Min, SK; Desai, JD; Jung, KD; Joo, OS |
| 2000-07 | Preparation and swelling behavior of biodegradable poly(aspartic acid)-based hydrogel | Min, SK; Kim, Soo Hyun; Kim, JH |
| 1996-08 | Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4 | Son, CS; Kim, SI; Kim, Y; Lee, MS; Kim, MS; Min, SK; Choi, IH |
| 1998-05-15 | Raman study of the nitrided GaAs thin layers | Koh, EK; Park, YJ; Kim, EK; Min, SK; Choh, SH |
| 1998-05 | Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Son, CS; Choi, IH |
| 1998-11 | Selective formation of InAs quantum dot structures grown by molecular beam epitaxy | Hahn, CK; Jang, YJ; Oh, CS; Park, YJ; Kim, EK; Min, SK; Park, KH; Park, JH |
| 1998-10-26 | Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material | Hahn, CK; Park, YJ; Kim, EK; Min, SK; Jung, SK; Park, JH |
| 1996-10 | Self-assembled quantum structures deposited by molecular beam epitaxy on GaAs (100) and (311)A substrates | Hahn, CK; Kim, EK; Jeun, IS; Kim, KM; Kim, MS; Min, SK; Park, JH |
| 1996-03 | Strain and critical layer thickness analysis of carbon-doped GaAs | Kim, SI; Kim, MS; Min, SK |
| 2000-01-10 | Structural change and photo-response in porous poly-Si/Si | Lyou, J; Yoon, KS; Kim, EK; Min, SK |
| 1998-02 | Structural characterization of TiO2 thin films on GaAs(100) substrate by MOCVD | Han, YK; Lee, TG; Yom, SS; Sons, MH; Kim, EK; Min, SK; Lee, JY |
