Showing results 12 to 18 of 18
Issue Date | Title | Author(s) |
---|---|---|
2019-07-15 | III-V on silicon avalanche photodiodes by heteroepitaxy | Yuan, Yuan; Jung, Daehwan; Sun, Keye; Zheng, Jiyuan; Jones, Andrew H.; Bowers, John E.; Campbell, Joe C. |
2020-03 | Investigation of Current-Driven Degradation of 1.3 mu m Quantum-Dot Lasers Epitaxially Grown on Silicon | Buffolo, Matteo; Samparisi, Fabio; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo |
2019-11 | Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications | Zhang, Zeyu; Jung, Daehwan; Norman, Justin C.; Chow, Weng W.; Bowers, John E. |
2019-06 | Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers | Buffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo |
2020-07-14 | Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon | Mukherjee, Kunal; Selvidge, Jennifer; Jung, Daehwan; Norman, Justin; Taylor, Aidan A.; Salmon, Mike; Liu, Alan Y.; Bowers, John E.; Herrick, Robert W. |
2019-03-11 | Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain | Vega-Flick, Alejandro; Jung, Daehwan; Yue, Shengying; Bowers, John E.; Liao, Bolin |
2019-12 | The Importance of p-Doping for Quantum Dot Laser on Silicon Performance | Norman, Justin C.; Zhang, Zeyu; Jung, Daehwan; Shang, Chen; Kennedy, M. J.; Dumont, Mario; Herrick, Robert W.; Gossard, Arthur C.; Bowers, John E. |