DSpace at KISTKIST Article2019

III-V on silicon avalanche photodiodes by heteroepitaxy

Authors
Yuan, Yuan; Jung, Daehwan; Sun, Keye; Zheng, Jiyuan; Jones, Andrew H.; Bowers, John E.; Campbell, Joe C.
Issue Date
2019-07-15
Publisher
OPTICAL SOC AMER
Citation
OPTICS LETTERS, v.44, no.14, pp.3538 - 3541
Abstract
We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k similar to 0.2 as InAlAs APDs on InP. (C) 2019 Optical Society of America
ISSN
0146-9592
URI
https://pubs.kist.re.kr/handle/201004/119772
DOI
10.1364/OL.44.003538
Appears in Collections:
KIST Article > 2019
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Full Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE