| 2002-06 | Implantation of N ions on sapphire substrate for improvement of GaN epilayer | Cho, YS; Jhin, J; Park, YJ; Cho, S; Koh, EK; Kim, EK; Kim, G; Byun, D; Min, SK |
| 2001 | Implantation of N-ion on sapphire substrate for GaN epilayer | Park, YJ; Cho, YS; Koh, EK; Kim, EK; Kim, GG; Byun, DJ; Min, SK |
| 2002-06 | Improved crystalline quality of GaN by substrate ion beam pretreatment | Cho, YS; Jhin, J; Koh, EK; Park, YJ; Kim, EK; Kim, G; Min, SK; Byun, D |
| 1996-08-12 | Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography method | Kim, TG; Kim, EK; Min, SK; Park, JH |
| 2003 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; Kim, EK |
| 2001-07 | Influence of growth conditions on the formation and the optical properties of self-assembled InAs quantum dots on (001)GaAs | Nah, J; Park, SH; Kim, KM; Park, YJ; Hyon, CK; Kim, EK |
| 1997-06 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved GaAs substrates | Kim, EK; Lee, MS; Kim, SI; Park, YJ; Min, SK; Lee, JY |
| 1997-03 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates | Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JY |
| 2004-07 | Investigation of detection wavelength in quantum dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Kim, EK |
| 1999-06 | Ionization energies of germanium-doped AlxGa1-xAs epilayers grown on GaAs substrates | Kim, HJ; Park, YK; Kim, SI; Kim, YT; Kim, EK; Moon, S; Kim, TW |
| 1996-10 | Large-area GaAs/AlGaAs quantum wire array grown by metalorganic chemical vapor deposition on a GaAs substrate with submicron gratings | Kim, TG; Hwang, SM; Kim, EK; Min, SK; Park, JH; Park, JH |
| 1997-05 | Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases | Kim, MS; Lee, C; Park, SK; Choi, WC; Kim, EK; Kim, SI; Ahn, BS; Min, SK |
| 1997-01 | Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD | Kim, SI; Kim, MS; Kim, Y; Hwang, SM; Min, BD; Son, CS; Kim, EK; Min, SK |
| 2001 | Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical links | Choi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC |
| 2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
| 1999-11 | Luminescence from the thermally treated cerium oxide on silicon | Choi, WC; Lee, HN; Kim, Y; Park, HM; Kim, EK |
| 1998-04 | Maskless selective epitaxial growth on patterned GaAs substrates by metalorganic chemical vapor deposition | Son, CS; Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1997-06 | Molecular-dynamics study of the vacancy-hydrogen and vacancy-deuterium complexes in silicon | Park, YK; Kim, EK; Min, SK |
| 2001-07 | Nano mold lithography for 40-nm patterns | Park, CM; Choi, BH; Hyon, CK; Hwang, SW; Ahn, D; Kim, EK |
| 1999-12 | Nano-structure fabrication and manipulation by the cantilever oscillation of an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Ahn, D; Kim, Y; Kim, EK |
| 1998-01 | One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 | Kim, EK; Kim, TG; Son, CS; Kim, SI; Park, YK; Kim, Y; Min, SK; Choi, IH |
| 2004-03 | Optical properties of multilayer SiNx/SiNy structures prepared by plasma-enhanced chemical vapor deposition | Park, YJ; Lee, TK; Lee, CH; Kim, EK |
| 1999-04 | Optical study of InAs/GaAs quantum dots using spectroscopic ellipsometry | Lee, H; Seong, EZ; Kim, SM; Son, MH; Min, BD; Kim, Y; Kim, EK |
| 2001-09 | Patterned formation of InAs QDs for single-electron device applications | Son, MH; Choi, BH; Hwang, SW; Ahn, D; Hyon, CK; Kim, EK; Kim, Y; Lim, JS |
| 1998-08 | Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations | Kim, TG; Park, KH; Hwang, SM; Kim, Y; Kim, EK; Min, SK; Leem, SJ; Jeon, JI; Park, JH; Chang, WSC |
| 2005-07 | Photoluminescence analysis of white-light-emitting Si nanoparticles using effective mass approximation method | Lee, S; Cho, WJ; Kim, YD; Kim, EK; Park, JG |
| 1998-04 | Photoluminescence in carbon-doped GaAs grown by atmospheric-pressure metalorganic chemical vapor deposition | Cho, SH; Kim, EK; Min, SK |
| 1998-05-15 | Raman study of the nitrided GaAs thin layers | Koh, EK; Park, YJ; Kim, EK; Min, SK; Choh, SH |
| 1999-02-15 | Ripening suppression and large photoluminescence blueshift in aligned InGaAs quantum dots on a vicinal, (100) GaAs substrate | Kim, Y; Min, BD; Kim, EK |
| 2000-01 | Role of hydrogen in the photoluminescence and the formation of nanocrystalline silicon | Choi, WC; Kim, CK; Kim, EK; Shim, CM; Jung, DG; Park, CY |
