Nano mold lithography for 40-nm patterns

Authors
Park, CMChoi, BHHyon, CKHwang, SWAhn, DKim, EK
Issue Date
2001-07
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.157 - 159
Abstract
We present nano mold lithography (NML) which is adequate for high throughput sub-100-nm wafer-level lithography. The details of the house-made press machine and the recipes of the NML are explained. A silicon mold with a minimum feature size of 40 nm has been successfully imprinted on PMMA layers. Reproducible pattern transfer has been routinely achieved with a feature size of 100 nm and a maximum area of 600 mum x 200 mum. Imprinting of metal molds on PMMA layers has also been demonstrated, which opens up the possibility of using metal lift-off patterns as mold patterns.
Keywords
nano mold lithography
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/140351
Appears in Collections:
KIST Article > 2001
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