| 2003-11-01 | Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator | Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY; Choi, IH |
| 2004-01 | Improvement of ferroelectric properties of Pt-SrBi2Nb2O9-SiO2-Si gate structure through oxygen plasma rapid thermal annealing | Kim, IS; Kim, SI; Kim, YT |
| 2001-03 | Improvement of the reliability of a Cu/W-N/SiOF multilevel interconnect by inserting plasma enhanced chemical vapor deposited W-N thin film | Kim, DJ; Sim, HS; Lee, S; Kim, YT; Kim, SI; Park, JW |
| 2004-04 | Incorporation of zirconium hydrogen phosphate into porous ionomer membranes | Song, MK; Kim, YT; Hwang, JS; Ha, HY; Rhee, HW |
| 2001-01 | Increased polyamine concentrations in the hair of cancer patients | Choi, MH; Kim, KR; Kim, YT; Chung, BC |
| 2005-11 | Inummorestorative properties of thymosin-alpha 1 in patients with gynecologic cancer receiving chemotherapy | Kim, YM; Jeon, GH; Jung, MH; Yang, HO; Song, HY; Kim, JH; Kim, YT; Mok, JE; Nam, JH |
| 1999-06 | Ionization energies of germanium-doped AlxGa1-xAs epilayers grown on GaAs substrates | Kim, HJ; Park, YK; Kim, SI; Kim, YT; Kim, EK; Moon, S; Kim, TW |
| 2004-12 | Lattice structural analysis of hydrogen induced defects in SrBi2Nb2O9 thin films | Kim, IS; Kim, YT; Kim, SI; Yoo, DC; Lee, JY |
| 1997-05 | Low contact resistance of n(+)-Si/Ti/WNx/Al submicron contact structures | Kim, YT; Lee, CW |
| 2001-07 | Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films | Seol, KS; Hiramatsu, H; Ohki, Y; Choi, IH; Kim, YT |
| 2005-03 | Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching process | Shim, SI; Kwon, YS; Kim, SI; Kim, YT; Park, JH |
| 1999-06-21 | Memory window of highly c-axis oriented ferroelectric YMnO3 thin films | Lee, HN; Kim, YT; Park, YK |
| 1997-12-15 | Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor | Kim, YT; Shin, DS |
| 2003-08 | Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO2 high-k dielectrics | Youm, M; Sim, HS; Jeon, H; Kim, SI; Kim, YT |
| 2003-07 | Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect | Sim, HS; Kim, SI; Kim, YT |
| 2002-09-02 | Microstructure control of YMnO3 thin films on Si (100) substrates | Yoo, DC; Lee, JY; Kim, IS; Kim, YT |
| 2004-08 | Multiple bit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | Il Shim, S; Kwon, YS; Kim, IS; Kim, SI; Kim, YT; Park, JH |
| 1997-11-15 | Nanostructured Ta-Si-N diffusion barriers for Cu metallization | Kim, DJ; Kim, YT; Park, JW |
| 1997-11-15 | Negative resistance of AlGaAs diodes Co-doped with Si and Mn | Gho, SJ; Park, SH; Lim, H; Choe, BD; Lee, CW; Ko, MK; Kim, YT |
| 1999-07 | New method to prepare W-B+-N ternary barrier to Cu diffusion by implanting BF2+ ions into W-N thin film | Kim, DJ; Kim, YT; Park, JW |
| 2002-11-14 | Novel synthesis of high-capacity cobalt vanadate for use in lithium secondary cells | Kim, YT; Gopukumar; Kim, KB; Cho, BW |
| 2003-11 | Nucleation and grain growth of SrBi2Nb2O9 thin films | Yoo, DC; Lee, JY; Kim, IS; Kim, YT |
| 2004-10-28 | Operation of single transistor type ferroelectric random access memory | Shim, SI; Kim, S; Kim, YT; Park, JH |
| 2004-05 | Oxygen plasma rapid thermal annealing to improve the electrical properties of Pt-SrBi2Nb2O9-SiO2_Si gate structure | Kim, IS; Kim, SI; Kim, YT |
| 2003-05-15 | Performance of electrostatic spray-deposited vanadium pentoxide in lithium secondary cells | Kim, YT; Gopukumar, S; Kim, KB; Cho, BW |
| 2001-12 | Performance of the W-B-N ternary diffusion barrier for Cu metallization | Lee, CW; Kim, YT; Lee, HS; Park, YK; Lee, TH; Chen, Q; Richardson, NV |
| 2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
| 2004-12 | Preparation and characterization of field effect transistor with (Bi,La)Ti3O12 ferroelectric gate material | Chang, HJ; Suh, KM; Park, JH; Gong, SC; Shim, SI; Kim, YT; Son, CS |
| 2004-08-20 | Preparation of chromane derivatives via indium-mediated intramolecular allylation reactions | Cha, JH; Cho, YS; Koh, HY; Lee, E; Kim, YT; Yang, HH; Kang, HY |
| 2005-11 | Pulse plasma assisted atomic layer deposition of W-C-N thin films for Cu interconnects | Kim, YT; Park, JH |
