1994-12 | LOW DARK CURRENT AND HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR ON SULFUR-TREATED INP | HAN, IK; HER, J; BYUN, YT; LEE, S; WOO, DH; LEE, Jung Il; KIM, SH; KANG, KN; PARK, HL |
1993-04-15 | MAGNETOTRANSPORT MEASUREMENTS ON AN IN0.52AL0.48AS/IN0.65GA0.35AS SINGLE QUANTUM-WELL | KIM, TW; JUNG, M; LEE, JI; KANG, KN; YOO, KH; IHM, G; LEE, SJ |
1989-05-25 | MOBILITY REDUCTION PARAMETERS IN SHORT-CHANNEL MOSFETS | LEE, JI; LEE, MB; KANG, KN; PARK, KO |
1993-08 | MODULATION CHARACTERISTICS OF A TUNABLE MULTISECTION DBR LASER | LEE, S; LEE, SY; PARK, HL; CHOI, WJ; LEE, JI; KANG, KN |
1991-09-01 | REMOTE PLASMA-ASSISTED OXIDATION OF INP | LEE, JI; KANG, KN; BAGLIO, JA; LIM, HJ; PARK, HL |
1990-06-21 | SIMPLE EXTRACTION METHOD FOR MOBILITY PARAMETERS IN SI-MOSFETS AT 77-K | LEE, JI; LEE, MB; KANG, KN; PARK, KO |
1990-10-11 | SIMPLE METHOD TO EXTRACT GATE VOLTAGE DEPENDENT SOURCE DRAIN RESISTANCE IN MOSFETS | LEE, JI; LEE, MB; LEE, YJ; HAN, IK; KANG, KN; PARK, KO |
1992-12-15 | SPECTROSCOPIC ELLIPSOMETRIC MEASUREMENTS OF PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION-GROWN SINXINP STRUCTURE | HAN, IK; LEE, YJ; LEE, JI; KANG, KN; KIM, SY |
1992-11-15 | STUDY OF CHARGE TRAPPING INSTABILITIES IN A SILICON-NITRIDE INDIUM-PHOSPHIDE METAL-INSULATOR-SEMICONDUCTOR STRUCTURE BY THE CONSTANT-CAPACITANCE METHOD | KIM, CH; CHOE, BD; LIM, H; HAN, IK; LEE, JI; KANG, KN |
1993-10 | STUDY ON THE LOW-FIELD CHARGE-TRAPPING PHENOMENA IN THE SILICON-NITRIDE INP STRUCTURE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; HER, J; LIM, H |