1996-10 | Large-area GaAs/AlGaAs quantum wire array grown by metalorganic chemical vapor deposition on a GaAs substrate with submicron gratings | Kim, TG; Hwang, SM; Kim, EK; Min, SK; Park, JH; Park, JH |
1997-05 | Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases | Kim, MS; Lee, C; Park, SK; Choi, WC; Kim, EK; Kim, SI; Ahn, BS; Min, SK |
1997-01 | Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD | Kim, SI; Kim, MS; Kim, Y; Hwang, SM; Min, BD; Son, CS; Kim, EK; Min, SK |
2001 | Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical links | Choi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC |
2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
1999-11 | Luminescence from the thermally treated cerium oxide on silicon | Choi, WC; Lee, HN; Kim, Y; Park, HM; Kim, EK |
1998-04 | Maskless selective epitaxial growth on patterned GaAs substrates by metalorganic chemical vapor deposition | Son, CS; Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
1997-06 | Molecular-dynamics study of the vacancy-hydrogen and vacancy-deuterium complexes in silicon | Park, YK; Kim, EK; Min, SK |
2001-07 | Nano mold lithography for 40-nm patterns | Park, CM; Choi, BH; Hyon, CK; Hwang, SW; Ahn, D; Kim, EK |
1999-12 | Nano-structure fabrication and manipulation by the cantilever oscillation of an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Ahn, D; Kim, Y; Kim, EK |
1998-01 | One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 | Kim, EK; Kim, TG; Son, CS; Kim, SI; Park, YK; Kim, Y; Min, SK; Choi, IH |
2004-03 | Optical properties of multilayer SiNx/SiNy structures prepared by plasma-enhanced chemical vapor deposition | Park, YJ; Lee, TK; Lee, CH; Kim, EK |
1999-04 | Optical study of InAs/GaAs quantum dots using spectroscopic ellipsometry | Lee, H; Seong, EZ; Kim, SM; Son, MH; Min, BD; Kim, Y; Kim, EK |
2001-09 | Patterned formation of InAs QDs for single-electron device applications | Son, MH; Choi, BH; Hwang, SW; Ahn, D; Hyon, CK; Kim, EK; Kim, Y; Lim, JS |
1998-08 | Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations | Kim, TG; Park, KH; Hwang, SM; Kim, Y; Kim, EK; Min, SK; Leem, SJ; Jeon, JI; Park, JH; Chang, WSC |
2005-07 | Photoluminescence analysis of white-light-emitting Si nanoparticles using effective mass approximation method | Lee, S; Cho, WJ; Kim, YD; Kim, EK; Park, JG |
1998-04 | Photoluminescence in carbon-doped GaAs grown by atmospheric-pressure metalorganic chemical vapor deposition | Cho, SH; Kim, EK; Min, SK |
1998-05-15 | Raman study of the nitrided GaAs thin layers | Koh, EK; Park, YJ; Kim, EK; Min, SK; Choh, SH |
1999-02-15 | Ripening suppression and large photoluminescence blueshift in aligned InGaAs quantum dots on a vicinal, (100) GaAs substrate | Kim, Y; Min, BD; Kim, EK |
2000-01 | Role of hydrogen in the photoluminescence and the formation of nanocrystalline silicon | Choi, WC; Kim, CK; Kim, EK; Shim, CM; Jung, DG; Park, CY |
2001 | Role of inserting layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, HJ; Lee, JH; Park, YM; Kim, EK; Choi, WJ; Han, IK; Lee, C |
2002-06 | Role of insertion layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, EK; Park, CJ; Cho, HY; Lim, YS; Lee, JY; Lee, C |
1998-05 | Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Son, CS; Choi, IH |
1998-11 | Selective formation of InAs quantum dot structures grown by molecular beam epitaxy | Hahn, CK; Jang, YJ; Oh, CS; Park, YJ; Kim, EK; Min, SK; Park, KH; Park, JH |
1998-10-26 | Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material | Hahn, CK; Park, YJ; Kim, EK; Min, SK; Jung, SK; Park, JH |
2001-03-05 | Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate | Choi, BH; Park, CM; Song, SH; Son, MH; Hwang, SW; Ahn, D; Kim, EK |
2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Min, BD; Ahn, D; Park, YJ; Kim, EK |
2000-12 | Self-assembled InAs quantum dots on GaAs (100) and (311)A substrates | Cho, S; Choi, YK; Kim, EK |
1996-10 | Self-assembled quantum structures deposited by molecular beam epitaxy on GaAs (100) and (311)A substrates | Hahn, CK; Kim, EK; Jeun, IS; Kim, KM; Kim, MS; Min, SK; Park, JH |
2003-01 | Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles | Kim, KM; Park, YJ; Roh, CH; Park, YM; Kim, EK; Hyon, CK; Park, JH; Kim, TW |