| 2003-05-26 | Nanostructured silicon formations as a result of ionized N(2) gas reactions on silicon with native oxide layers | Jung, MC; Lee, TG; Park, YJ; Jun, SH; Lee, J; Han, M; Jeong, JS; Lee, JY |
| 1997-04 | Nitridation of Al2O3 and GaAs surfaces by control enhanced ECR plasma | Mutoh, H; OKeeffe, P; Den, S; Komuro, S; Morikawa, T; Park, YJ; Hara, K; Munekata, H; Kukimoto, H |
| 1999-01 | Nuclear magnetic relaxation studies of Ga-69, Ga-71, and As-75 nuclei in GaAs single crystals doped with paramagnetic impurities | Yeom, TH; Kim, IG; Choh, SH; Hong, KS; Park, YJ; Min, SK |
| 2005-11 | Optical and electronic properties in (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys | Woo, JT; Kim, JH; Kim, TW; Song, JD; Park, YJ |
| 2004-12-15 | Optical and magnetic properties of Mn+-implanted GaAs | Shon, Y; Park, YS; Chung, KJ; Fu, DJ; Kim, DY; Kim, HS; Kim, HJ; Kang, TW; Kim, Y; Fan, XJ; Park, YJ |
| 2005-02 | Optical properties of Ga1-xMnxAs (0 <= x <= 0.09) studied using spectroscopic ellipsornetry | Kang, TD; Lee, GS; Lee, H; Koh, D; Park, YJ |
| 2004-03 | Optical properties of multilayer SiNx/SiNy structures prepared by plasma-enhanced chemical vapor deposition | Park, YJ; Lee, TK; Lee, CH; Kim, EK |
| 2004-06-15 | Optical properties of silicon nanoparticles by ultrasound-induced solution method | Lee, S; Cho, WJ; Chin, CS; Han, IK; Choi, WJ; Park, YJ; Song, JD; Lee, JI |
| 2004-07 | Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy | Rho, H; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 1997-03-01 | Oxygen atomic flux O-* enhancement by gas-pulsed electron cyclotron resonance plasma | Park, YJ; OKeeffe, P; Ozasa, K; Mutoh, H; Aoyagi, Y; Min, SK |
| 2005-11 | Performance improvement of high-power AlGaAs lasers | Kim, KC; Kim, TG; Sung, YM; Choi, YC; Park, YJ; Han, IK; Lee, SW; Moon, GW; Yoon, SH; Jang, KY; Park, JI |
| 2003-08 | Pharmacokinetics and bioequivalence of tiropramide in healthy volunteers | Kwon, OS; Park, YJ; Chung, YB |
| 2004-07 | Photoluminescence and electromodulation study of InAs/GaAs quantum dots | Kim, SS; Cheong, H; Song, JD; Park, YM; Shin, JC; Park, YJ; Choi, WJ; Lee, JI |
| 2003-05 | Quantitative analysis of tiropramide in human blood by gas chromatography with nitrogen-phosphorus detector | Kwon, OS; Park, YJ; Ryu, JC; Chung, YB |
| 1998-05-15 | Raman study of the nitrided GaAs thin layers | Koh, EK; Park, YJ; Kim, EK; Min, SK; Choh, SH |
| 2002-10 | Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation | Kim, HJ; Lee, SH; Jo, J; Nishihara, Y; Park, YJ |
| 1997-08-11 | Reversible transition between InGaAs dot structure and InGaAsP flat surface | Ozasa, K; Aoyagi, Y; Park, YJ; Samuelson, L |
| 2001 | Role of inserting layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, HJ; Lee, JH; Park, YM; Kim, EK; Choi, WJ; Han, IK; Lee, C |
| 2002-06 | Role of insertion layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, EK; Park, CJ; Cho, HY; Lim, YS; Lee, JY; Lee, C |
| 1998-11 | Selective formation of InAs quantum dot structures grown by molecular beam epitaxy | Hahn, CK; Jang, YJ; Oh, CS; Park, YJ; Kim, EK; Min, SK; Park, KH; Park, JH |
| 1998-10-26 | Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material | Hahn, CK; Park, YJ; Kim, EK; Min, SK; Jung, SK; Park, JH |
| 2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Min, BD; Ahn, D; Park, YJ; Kim, EK |
| 2003-01 | Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles | Kim, KM; Park, YJ; Roh, CH; Park, YM; Kim, EK; Hyon, CK; Park, JH; Kim, TW |
| 2003-02 | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | Han, I; Choi, WJ; Kim, HJ; Park, YJ; Cho, WJ; Lee, JI; Chovet, A; Brini, J |
| 1999-04-01 | Simulations of stress evolution and the current density scaling of electromigration-induced failure times in pure and alloyed interconnects | Park, YJ; Andleigh, VK; Thompson, CV |
| 2005-06-06 | Single-crystalline diluted magnetic semiconductor GaN : Mn nanowires | Choi, HJ; Seong, HK; Chang, J; Lee, KI; Park, YJ; Kim, JJ; Lee, SK; He, RR; Kuykendall, T; Yang, PD |
| 2002-12 | Single-electron tunneling through a heavily doped GaAs quantum dot | Son, SH; Choi, BH; Cho, KH; Hwang, SW; Park, YM; Park, YJ; Kim, EK; Ahn, D |
| 2001-03 | Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer | Kim, HJ; Park, YJ; Kim, EK; Kim, TW |
| 2003-02 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing | Shin, JC; Choi, WJ; Han, IK; Park, YJ; Lee, JI; Kim, HJ; Choi, JW; Kim, EK |
| 2003-02 | Spectroscopic ellipsometric properties of Ga1-xFexAs dilute magnetic semiconductors | Lee, H; Kang, TD; Park, YJ; Oh, HT; Cho, HY; Moriya, R; Munekata, H |
