Optical properties of Ga1-xMnxAs (0 <= x <= 0.09) studied using spectroscopic ellipsornetry
- Authors
- Kang, TD; Lee, GS; Lee, H; Koh, D; Park, YJ
- Issue Date
- 2005-02
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, no.2, pp.482 - 486
- Abstract
- We investigate the optical properties of a series of Ga1-xMnxAs thin films by using spectroscopic ellipsometry. The Ga1-xMnxAs films are grown directly on GaAs (100) substrates by using molecular beam epitaxy. Using spectroscopic ellipsometry, we measure the pseudo-dielectric function for each of the films in the energy range between 1.0 - 6.0 eV. By using the Adachi lineshape model, we determined the dielectric functions and critical point parameters for the Ga1-xMnxAs films. We discuss the energy shifts associated with the E-1, E-1 + Delta(1), E-0('), and E-2 band gaps. We also discuss the band gap energy shift of Ga1(x)(_)Mn(x)As alloys as Mn is incorporated into the lattice.
- Keywords
- ELLIPSOMETRY; GAAS; ELLIPSOMETRY; GAAS; GaMnAs; ellipsometry; band gap energy; diluted magnetic system
- ISSN
- 0374-4884
- URI
- https://pubs.kist.re.kr/handle/201004/136791
- Appears in Collections:
- KIST Article > 2005
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