| 1998-07-03 | Rare earth concentration in the primary Si crystal in rare earth added Al-21wt.%Si alloy | Chang, JY; Kim, GH; Moon, IG; Choi, CS |
| 2000-11 | Refined continuum model on the behavior of intergranular films in silicon nitride ceramics | Choi, HJ; Kim, GH; Lee, JG; Kim, YW |
| 1996-04-15 | Simple procedure for phase identification using convergent beam electron diffraction patterns | Kim, GH; Kim, HS; Kum, DW |
| 2001-12-03 | Simultaneous growth mechanism of intermediate silicides in MoSi2/Mo system | Yoon, JK; Kim, GH; Byun, JY; Kim, JS; Choi, CS |
| 2002-02-01 | Stable sealing glass for planar solid oxide fuel cell | Sohn, SB; Choi, SY; Kim, GH; Song, HS; Kim, GD |
| 2002-04-11 | Study on reaction and diffusion in the Mo-Si system by ZrO2 marker experiments | Byun, JY; Yoon, JK; Kim, GH; Kim, JS; Choi, CS |
| 2004-02 | Suitable glass-ceramic sealant for planar solid-oxide fuel cells | Sohn, SB; Choi, SY; Kim, GH; Song, HS; Kim, GD |
| 2001-02-15 | Synthesis and properties of cubic zirconia-alumina composite by mechanical alloying | Kwon, NH; Kim, GH; Song, HS; Lee, HL |
| 1999-05-15 | The characteristics of interfacial strains developed in silicon by wet O-2 oxidation | Shin, DW; You, YH; Choi, DJ; Kim, GH |
| 2001-04 | The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films | Oh, JH; Oh, BJ; Choi, DJ; Kim, GH; Song, HS |
| 2002-08-01 | The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation | Cho, J; Han, S; Lee, Y; Kim, OK; Kim, GH; Kim, YW; Lim, H |
| 2003-03 | The impact of anode microstructure on the power generating characteristics of SOFC | Lee, JH; Heo, JW; Lee, DS; Kim, J; Kim, GH; Lee, HW; Song, HS; Moon, JH |
| 2001-02-02 | The measurement of nitrogen ion species ratio in inductively coupled plasma source ion implantation | Cho, J; Han, S; Lee, Y; Kim, OK; Kim, GH; Kim, YW; Lim, H; Suh, M |
| 1999-06-01 | The stacking faults and their strain effect at the Si/SiO2 interfaces of a directly bonded SOI (silicon on insulator) | Shin, DW; Choi, DJ; Kim, GH |
| 1997-11-15 | Tilt-axis effect on oxidation behaviour and capacitance-voltage characteristics of (100) silicon | Woo, HJ; Choi, DJ; Kim, GH |
| 2004-08-02 | Time-resolved plasma measurement in a high-power pulsed ICP source for large area | Kim, YW; Jung, YD; Han, S; Lee, Y; Kim, GH |
| 2003-05-15 | Transmission electron microscopy study on ferromagnetic (Ga,Mn)N epitaxial films | Chang, JY; Kim, GH; Lee, JM; Han, SH; Kim, HJ; Lee, WY; Ham, MH; Huh, KS; Myoung, JM |
| 2001-02-02 | X-ray diffraction analysis of pure aluminum in the cyclic equal channel angular pressing | Chang, JY; Kim, GH; Moon, IG |
