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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
1991-01A modeling on gate voltage dependence of series resistance for GaAs MESFET's and the parameter extraction utilizing the gate probe model.강광남; 이정일; 양진모; 임한조; 이유종
-DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs.KANG KWANG NHAM; Yoo Jong Lee; EOM KYUNG SOOK; KIM MOO SUNG
-Fabrication and characterization of homostructure GaAs δ -doped FETs.KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee
1987-01Fabrication of 1um gate GaAs MESFET and analysis of correlation between dc characteristics and channel parameters.강광남; 엄경숙; 이유종
1995-01Microwave characteristics of GaAs MESFET with optical illuminationKim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K
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