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DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs.

Other Titles

VPE 및 MOCVD 법으로 성장된 submicron 게이트 normally-on, normall-off GaAs MESFET 의 DC 특성 =

Authors

KANG KWANG NHAM; Yoo Jong Lee; EOM KYUNG SOOK; KIM MOO SUNG

Citation

전기재료 , 반도체 및 CAD 학술대회 논문집, pp.115 - ?

Keywords

GaAs MESFET

URI

https://pubs.kist.re.kr/handle/201004/112797

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KIST Conference Paper > Others

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