Microwave characteristics of GaAs MESFET with optical illumination
- Authors
- Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K
- Issue Date
- 1995-01
- Publisher
- IOP PUBLISHING LTD
- Citation
- COMPOUND SEMICONDUCTORS 1995, v.145, pp.763 - 768
- Abstract
- We fabricated 1x240 mu m(2) GaAs MESFET's and investigated their microwave characteristics under optical illumination with varying optical power density from 1.6mW/cm(2) to 472mW/cm(2). Typical current gain cut-off frequency(fT) and maximum frequency of oscillation(f(max)) of fabricated devices were 6.6GHz and 13.6GHz, respectively, at V-ds=3.0V and V-gs=-0.25V without optical illumination. Under 157mW/cm(2) of optical illumination at the same bias, however, fT and f(max) were increased to 9.5GHz and 15.3GHz, respectively. Extracted device parasitics with optical illumination are also reported.
- Keywords
- GaAs MESFET
- ISSN
- 0951-3248
- URI
- https://pubs.kist.re.kr/handle/201004/145408
- Appears in Collections:
- KIST Article > Others
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.