Showing results 1 to 16 of 16
Issue Date | Title | Author(s) |
---|---|---|
- | An experimental investigation on the origin of super-resolution effects of Te-based chalcogenide semiconducting thin films | Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI |
2008-06-16 | Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing | Lee, Suyoun; Jeong, Jeung-Hyun; Lee, Taek Sung; Kim, Won Mok; Cheong, Byung-Ki |
- | Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative | CHEONG, BYUNG KI; Jeung-hyun Jeong; Lee Suyoun; Kim Inho; Wu Zhe; Ahn Hyoung Woo; Kim Seul-Cham; LEE HYUN SUCK; Park Young-wook |
2009-02-07 | Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio | Jeong, Jeung-Hyun; Lee, Hyun Seok; Lee, Suyoun; Lee, Taek Sung; Kim, Won Mok; Zhe, Wu; Kim, Seul Cham; Oh, Kyu Hwan; Cheong, Byung-Ki |
- | Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTe | Zang Gang; Wu Zhe; Park Young Wook; Jeung-hyun Jeong; Jeong, Doo Seok; Yoo, Won Jong; CHEONG, BYUNG KI |
2009-05 | Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe | Lee, Suyoun; Jeong, Jeung-hyun; Wu, Zhe; Park, Young-Wook; Kim, Won Mok; Cheong, Byung-ki |
2006-03 | Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material | Cheong, Byung-ki; Kim, In Ho; Jung, Hanju; Lee, Taek Sung; Jeong, Jeung-hyun; Kang, Dae-Hwan; Kim, Won Mok; Ha, Jae-Geun |
2012-10 | Fast and scalable memory characteristics of Ge-doped SbTe phase change materials | Cheong, Byung-ki; Lee, Suyoun; Jeong, Jeung-hyun; Park, Sohee; Han, Seungwu; Wu, Zhe; Ahn, Dong-Ho |
- | Improved Superresolution Readout by Nitrogen Addition in Ge-doped SbTe | LEE, TAEK SUNG; Lee Hyun Seok; Choi Jihoon; Lee Suyoun; KIM, WON MOK; Kim, Jooho; CHEONG, BYUNG KI |
2011-03 | Investigation of the Structural and Optical Properties of Ge-doped SbTe Films with Various Sb:Te Ratios | Kang, Tae Dong; Sirenko, Andrei; Park, Jun-Woo; Lee, Hyun Seok; Lee, Suyoun; Jeong, Jeung-hyun; Cheong, Byung-ki; Lee, Hosun |
- | Investigation on the improved superresolution effect by nitorgen addition in Ge-doped SbTe | Lee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; CHEONG, BYUNG KI |
2011-03 | Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe | Zhang, Gang; Wu, Zhe; Jeong, Jeung-Hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki |
2007-04 | Origin of nonlinear optical characteristics of crystalline Ge-Sb-Te thin films for possible superresolution effects | Lee, Hyun Seok; Cheong, Byung-ki; Lee, Taek Sung; Jeong, Jeung-Hyun; Lee, Suyoun; Kim, Won Mok; Kim, Donghwan |
- | Phase Change Material for Potential Use in High density Non-volatile Memory | CHEONG, BYUNG KI; Kim Inho; Jeung-hyun Jeong; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Dae-Hwan Kang; Hee-Suk Chung; Kim Seul-Cham; Kyu Hwan Oh |
2010-01 | The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe | Park, Young-wook; Lee, Hyun Seok; Ahn, Hyung Woo; Wu, Zhe; Lee, Suyoun; Jeong, Jeung-hyun; Jeong, Doo Seok; Yi, Kyung-woo; Cheong, Byung-ki |
- | (Undefined) | 박준우; Lee Hyun Seok; CHEONG, BYUNG KI; 이호선 |