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Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTe

Authors

Zang Gang; Wu Zhe; Park Young Wook; Jeung-hyun Jeong; Jeong, Doo Seok; Yoo, Won Jong; CHEONG, BYUNG KI

Citation

European symposium on phase change and ovonic science 2010, pp.147 - 149

Keywords

phase change memory; multi-level cell; Ge-doped SbTe

URI

https://pubs.kist.re.kr/handle/201004/99513

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KIST Conference Paper > Others

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