| 1990-03-01 | DEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, EK; CHO, HY; KIM, Y; KIM, MS; KIM, HS; MIN, SK; YOON, JH; CHOH, SH |
| 1995-12-07 | EFFECT OF MAGNESIUM FLUORIDE IN CHROMIUM-MAGNESIUM CATALYSTS ON THE FLUORINATION REACTION OF 1,1,1-TRIFLUORO-2-CHLOROETHANE | KIM, HG; KIM, HS; LEE, BG; LEE, HJ; KIM, SH |
| 1991-05-15 | EFFECTS OF ELECTRON DEEP TRAPS ON GENERATION LIFETIME IN DENUDED ZONE OF N-TYPE SI WAFER | KIM, HS; KIM, EK; MIN, SK |
| 1992-05 | SCHOTTKY DIODE CHARACTERISTICS AND DEEP LEVELS ON HYDROGENATED N-TYPE GAAS | KIM, EK; CHO, HY; KIM, HS; MIN, SK; KIM, T |
| 1995-03 | SELECTIVE HYDROGENOLYSIS OF CFC-113A BY GROUP-VIII TRANSITION-METAL COMPLEXES | CHO, OJ; LEE, IM; PARK, KY; KIM, HS |
| 1994 | SUPERPLASTIC-LIKE BEHAVIOR OF A HYPER-PERITECTIC AL-10WT%TI ALLOY AT HIGH STRAIN-RATES | KUM, DW; KIM, HS |
| 1989-08 | X-RAY AND DLTS CHARACTERIZATIONS OF INXGA1-X AS(X-LESS-THAN-0.03)/GAAS LAYERS GROWN BY VPE USING AN IN/GA ALLOY SOURCE | KIM, HS; KIM, EK; MIN, SK; LEE, CC |
