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DEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

Authors

KIM, EK; CHO, HY; KIM, Y; KIM, MS; KIM, HS; MIN, SK; YOON, JH; CHOH, SH

Issue Date

1990-03-01

Publisher

AMER INST PHYSICS

Citation

JOURNAL OF APPLIED PHYSICS, v.67, no.5, pp.2454 - 2456

Keywords

deep electron trap; GaAs on Si; metalorganic chemical vapor deposition (MOCVD)

ISSN

0021-8979

URI

https://pubs.kist.re.kr/handle/201004/147120

DOI

10.1063/1.345493

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KIST Article > Others

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