| 1997-10 | Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVD | 박영균; 김성일; 김용; 손창식; 김은규; 민석기 |
| 1998-03 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | 박영균; 손창식; 김성일; 김용; 김은규; 민석기; 최인훈 |
| 1999-09 | Effects of Bi-Pt alloy on electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si ferroelectric gate structure | 김용태; 신동석; 박영균; 최인훈 |
| 1999-03 | Effects of boron implantation on the structural and diffusion barrier properties of W-N thin film | 박영균; 김용태; 김동준; 박종완 |
| 1991-05 | Effects of dielectric constant change in a capacitive transducer. | 박영균; R. D. Peters; J. Cardenas-Garcia; M. Parten |
| 2000-06 | Effects of Y to Mn ratio on memory window in the YMnO₃ ferroelectic gate | 김용태; 박영균; 장호정; 김희준; Akira Yoshida |
| 1999-01 | Effects PECVD W-N diffusion barrier on thermal stress and electrical properties of Cu/W-N/SiOF multilevel interconnect | 김용태; 김동준; 이석형; 박영균; 김익수; 박종완 |
| 1999-11 | Efficiency enhancement of quantum-structure solar cells utilizing InxGa1-xAs/GaAs multiple quantum wells | 김효진; 박영균; 박용주; 김성일; 김은규; 김태환 |
| 1997-10 | Electrical and optical properties of quantum wire laser | J. C. Jang; 김성일; 황승민; 김효진; 손창식; J. H. Park; 박영균; 김은규; 민석기; 김태완 |
| 1997-04 | Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition | 손창식; 김성일; 김태근; 김용; 조신호; 박영균; 김은규; 민석기; 최인훈 |
| 1999-06 | Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition | 박영균; 김성일; 손창식 |
| 1998-11 | Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition | 손창식; 박영균; 김성일 |
| 1999-01 | Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy. | 김성일; 박영균; 김용태; H. H. Tan; C. Jagadish |
| 1999-01 | Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy. | 김성일; 박영균; 김용태; H. H. Tan; C. Jagadish |
| 1999-06 | Fabrication of AlGaAs/GaAs heteroface solar cells | 김효진; 박영균; 김성일; 김은규; 김태환 |
| 1998-11 | Fabrication of AlGaAs/GaAs heteroface solar cells | 김효진; 박영균; 김성일; 김은규; 황성민; 김태환 |
| 1997-04 | Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD | 황성민; 김성일; 이달진; 박영균; 김은규; 민석기; 김용 |
| 2000-07 | Fabrication of noble quantum wire structures grown by low pressure MOCVD using selective area epitaxy | 김성일; 김제원; 박영균; 김용태 |
| 1999-07 | Facet evolution as a function of the surface migration length of Al0.5Ga0.5As/GaAs multilayers grown on mesa-patterned GaAs substrates | 김효진; 박영균; 김성일; 김은규; 김태환 |
| 1999-09 | Facet evolution of Al0.5Ga0.5As/GaAs multilayers grown on mesa-patterned GaAs substrate | 김효진; 박영균; 김성일; 김은규; 김태환 |
| 1995-11 | First-principles calculation of the phonon dispersion and cubic anharmonic force-constant tensor of silicon | 박영균; A. A. Maradudin; R. F. Wallis; A. A. Quong |
| 1997-04 | First-principles calculation of the phonon dispersion curves of silicon | 박영균; 김성일; 이지윤; 민석기 |
| 1997-09 | First-principles calculation of the phonon dispersion curves of silicon | 박영균; 민석기 |
| 1998-11 | GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates | 김은규; 김태근; 손창식; 황성민; 김용; 박영균; 민석기 |
| 2015-01 | Heterogeneity of tremor mechanisms assessed by tremor-related cortical potential in mice | 박영균; 최지현; 이충기; 김세연; 김영수; 장기영; 백선아; 김대수 |
| 1996-01 | Hydrogen in silicon: a discussion of diffusion and passivation mechanisms. | 박영균; B. L. Sopori; X. Deng; J. P. Benner; A. Rohatgi; P. Sana; S. K. Estreicher; M. A. Roberson |
| 1995-01 | Hydrogen in silicon: Current understanding of diffusion and passivation mechanisms. | 박영균; B. L. Sopori; Stefan K. Estreicher; X. Deng; J. P. Benner; A. Rohatgi; P. Sana; M. A. Roberson |
| 1996-03 | Hydrogen-oxygen interactions in silicon. | 박영균; Stefan K. Estreicher; Peter A. Fedders |
| 1996-01 | Hydrogen-oxygen interactions in silicon. | 박영균; Stefan K. Estreicher; Peter A. Fedders |
| 1999-01 | Improvement in diffusion barrier properties of PECVD W-N thin film by low energy BF2+ implantation | 김동준; 김용태; 박영균; 심현상; 박종완 |
