| 2002-10 | P-channel MODFET as an optoelectronic detector | Hwe-Jong Kim; Dong Myong Kim; 한일기; 최원준; Jacques Zimmermann; 이정일 |
| 1999-04 | Packaging of electrically switchable tunable lasers | S.H. Cho; S. Fox; 한일기; J.H. Song; Y. Hu; Z.F. Fan; F.G. Johnson; D. Stone; Goetz Erbert; Frank Bugge; M. Dagenais |
| 2004-02 | Parametric Study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxy | 송진동; 허두창; 한일기; J.M. Kim; 이용탁; S.H. Park |
| 1992-01 | PECVD 방법에 의해 제작된 SiNx/InP MIS 구조의 bias stress 에 의한 C-V 및 G-V 곡선의 변화 . | 강광남; 이정일; 이명복; 한일기; 이유종 |
| 1997-11 | Performance characteristics of CBE - grwon InGaAs/InGaAsP MQW RWG laser diode with dry etching technique | 박경현; 엄창섭; 한일기; 우덕하; 김선호; 최상삼 |
| 2005-11 | Performance Improvement of High-Power AlGaAs Lasers | 김경찬; Tae Geun Kim; Yun Mo Sung; Young Chul Choi; 박용주; 한일기; Seung Woong Lee; Gi Won Moon; Sang Ho Yoon; Kee Youn Jang; Jong Ik Park |
| 2010-08 | Photoluminescence Characterization of Vertically Coupled Low Density InGaAs Quantum Dots for Quantum Information Processing Devices | 하승규; 조남기; 임주영; 박성준; 송진동; 최원준; 한일기; 이정일 |
| 2004-08 | Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells | 이창명; 최석호; 김창수; 노삼규; 이주인; 임기영; 한일기 |
| 2004-10 | Photoluminescence of Er-Implated GaN | 손창식; 김성일; 김영환; 한일기; 김용태; Akihiro Wakahara; 최인훈; Homero Castaneda Lopez |
| 2003-05 | Photoluminescence of the AlGaN/GaN heterostructure and two-dimensional electron gas | 이창명; 반승일; 노삼규; 이주인; 이동한; 임재영; 한일기 |
| 2006-06 | Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots | S.I. Jung; H.Y. Yeo; I. Yun; J.Y. Leem; 한일기; J.S. Kim; J.I. Lee |
| 1995-01 | Photonic control of DC and microwave characteristics in AlGaAs/GaAs/InGaAs double heterostructure pseudomorphic HEMT's. | 김회종; 우덕하; 한일기; 최원준; 이정일; 강광남; S. J. Kim; D. M. Kim; H. Chung; S. I. Kim; S. H. Kim; K. Cho |
| 2000-08 | Photonic control of p-channel double heterojunction MODFET | 김회종; 이정일; 김동명; 한일기; Jacques Zimmermann |
| 1996-01 | Photonics DC and microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET. | 강광남; 김회종; S. H. Song; D. M. Kim; 한일기; 이정일; S. H. Kim; S. S. Choi; K. Cho |
| 2003-10 | Physical model for low frequency noise in poly-Si resistors and thin-film transistors | 한일기; 최원준; 박용주; 조운조; 이정일; 이명복; Alain Chovet; Jean Brini; Gerard Ghibaudo |
| 2010-04 | Physical properties of 808-nm InAlAs/AlGaAs quantum dots on GaAs substrate | 김수연; 이은혜; 하승규; 신상훈; 송진동; 한일기; 이정일; 김태환 |
| 2008-07 | Physical Understanding of the Hooge Parameter in ZnO Nanowire Devices | 이정일; 한일기; 유병용; 이규철; Gerard Ghibaudo |
| 2016-11 | Plasmonic Nanowire-Enhanced Upconversion Luminescence for Anticounterfeit Devices | 한일기; 권석준; 장호성; 고형덕; 정기남; 박기선; 변동진 |
| 2018-08 | Post-thermal-induced recrystallization in GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy with near-unity stoichiometry | 한일기; 송진동; 여인아; Kyung Soo Yi; 이은혜; Jong Su Kim |
| 2003-02 | Power law in optical response of MODFET's | 최원준; 김회종; 한일기; 조운조; 박용주; 이정일; 김해택; 김동명 |
| 2017-08 | Quantum cascade lasers with Y2O3 insulation layer operating at 8.1 um | 한일기; 송진동; 박준서; 강준현; 양현덕; 이송이; 정신영; 주범수; 김지훈; 한문섭 |
| 2018-04 | Red/green/blue selective phototransistors with a hybrid structure of quantum-dots and an oxide semiconductor | 한일기; Jiin Yu; Byung Jun Kim; Sungho Park; Seong Jun Kang |
| 1998-01 | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering | 최원준; 한상민; S.I. Shah; 최석근; 우덕하; 이석; 김회종; 한일기; 이정일; 강광남; 조재원 |
| 1997-12 | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing Si-rich SiN capping layer for dielectric cap quantum well disordering | 최원준; 김회종; 한상민; Syed ljaz Shah; 최석근; 이석; 우덕하; 한일기; 김선호; 이정일; 강광남 |
| 1990-01 | RIE 로 처리된 GaAs 표면의 전기적 특성연구 . | 김성일; 한일기; 최원준; 이정일; 강광남; 조준환; 임한조; 이유종; 이명복 |
| 2001-11 | Role of inserting layer controlling wavelength in InGaAs quantum dots | S.K.Park; 박용주; H.J.Kim; J.H.Lee; Y.M.Park; 김은규; 최원준; 한일기; C.Lee |
| 2003-08 | Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots | 송진동; Y. M. Park; J. G. Lim; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일 |
| 2002-08 | Role of thin insertion layer on the optical properties of InGaAs quantum dots | Jung Ho Lee; 최원준; 한일기; 박용주; Eun Kyu Kim; Chong Mu Lee; Hyoun-Woo Kim |
| 1992-01 | Schottky barrier enhancement of InGaAs with SiNx grown by PECVD. | 강광남; 이정일; 김충환; 박홍이; 한일기 |
| 2009-11 | Selective epitaxy growth of multiple-stacked InP/InGaAs on the planar type by chemical beam epitaxy | 한일기; 이정일 |
